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Current challenges mainly stem from the dynamic environment
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Compound Semiconductors Strained Layers and Devices formatIsbn:Softcover - 9781461370000 Current challenges mainly stem fromDuring the last 25 years (after the growth of the first pseudomorphic GeSi strained layers on Si by Erich Kasper in Germany) we have seen a steady accu mulation of new materials and devices with enhanced performance made pos sible by strain. 1989 1999 have been very good years for the strained Iayer devices. Several breakthroughs were made in the growth and doping technology of strained layers. New devices were fabricated as a results of these break
